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| BAR89... Silicon PIN Diode Optimized for antenna switches in hand held applications Very low capacitance at zero volts reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 0.8 @ IF = 10mA) Very low signal distortion 1 Parameter Diode reverse voltage Forward current Total power dissipation Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) , BAR89-02L 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 BAR89-02L 2 Type BAR89-02L Package TSLP-2-1 Configuration single, leadless LS(nH) Marking 0.4 RS Maximum Ratings at TA = 25C, unless otherwise specified Symbol VR IF Ptot Tj Top Tstg Symbol RthJS Value 80 100 250 150 -55 ... 125 -55 ... 150 Unit V mA mW C Ts 133C Value 65 Unit K/W Jul-15-2003 BAR89... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I(BR) = 5 A Reverse current VR = 60 V Forward voltage IF = 10 mA IF = 100 mA VF 0.83 0.95 0.9 1.1 V IR 50 nA V(BR) 80 V typ. max. Unit 2 Jul-15-2003 BAR89... Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz Forward resistance IF = 1 mA, f = 100 MHz IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, I-region width Insertion loss1) IF = 1 mA, f = 1.8 GHz IF = 5 mA, f = 1.8 GHz IF = 10 mA, f = 1.8 GHz Isolation1) VR = 0 V, f = 0.9 GHz VR = 0 V, f = 1.8 GHz VR = 0 V, f = 2.45 GHz 1BAR89-02L Unit max. pF typ. CT RP rf rr 0.25 0.25 0.19 0.18 35 5 3.5 3 1.2 0.8 800 0.35 k 1.5 ns RL = 100 in series configuration, Z = 50 3 Charge carrier life time - WI |S21|2 - 19 -0.23 -0.1 -0.08 -19 -14 -11 - m dB |S21|2 - Jul-15-2003 BAR89... Diode capacitance CT = f = Parameter 0.5 pF 10 3 KOhm 0.4 10 2 0.35 1 MHz 100 MHz 1 GHz 1.8 GHz CT Rp 0.3 10 1 0.25 10 0 0.2 100 MHz 1 GHz 1.8 GHz 0.15 10 -1 0 0.1 0 2 4 6 8 10 12 14 16 V 20 2 4 6 8 10 12 14 16 VR f = 100MHz 10 Ohm 3 TA = Parameter 10 0 A 10 -1 10 -2 10 -3 10 2 rf IF 10 -4 10 -5 10 -6 10 1 10 0 10 -7 10 -8 10 -1 10 -2 10 -1 10 0 10 1 10 2 mA10 3 10 -9 0 0.2 0.4 IF 4 Forward resistance rf = (I F) Forward current IF = (VF) -40C +25C +85C +125C 0.6 0.8 V VF Jul-15-2003 (VR ) Reverse parallel resistance RP = (VR ) f = Parameter V 20 VR 1.2 BAR89... Forward current IF = BAR89-02L 120 mA 100 90 80 BAR89-02L 10 2 mA RthJS 10 1 IF 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 C 150 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 TS BAR89-02L 10 2 mA |S21| IF 10 1 10 0 -6 10 10 -5 IFmax / IFDC = (tp ) IF = Parameter 0 dB BAR89-02L in series configuration, Z = 50 -0.1 -0.15 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10mA 5mA 1mA -0.2 -0.25 -0.3 -0.35 10 -4 10 -3 10 -2 10 -1 C 10 1 -0.4 0 1 2 3 tp 5 Permissible Pulse Load Insertion loss |S21 |2 = (f) 4 Jul-15-2003 (TS ) Permissible Puls Load RthJS = (tp ) C 10 0 tp GHz 6 f BAR89... Isolation |S21 |2 = VR = Parameter 0 (f) BAR89-02L in series configuration, Z = 50 dB |S21| -10 -15 -20 0V 1V 10 V -25 -30 0 1 2 3 4 GHz 6 f 6 Jul-15-2003 |
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